PC(W)IC(A)Vcbo(V)Vceo(V)Vebo(V)hFEhFE VCE(V)hFE IC(A)Cob(pF)TYPPackage175 15 650 400 6 6-20 5 15 <400 TO-3
MJ16110 |
RFQ for MJ16110 |
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| Product | Manufacturers | Pack | D/C | ||||||||||
| MJ16110 | - | - | 500 |
Features |
| • Excellent Dynamic Saturation Characteristics• Rugged RBSOA Capability• CollectorEmitter Sustaining Voltage - VCEO(sus) - 400 V• CollectorEmitter Breakdown - V(BR)CES - 650 V• StateofArt Bipolar Power Transistor Design• Fast Inductive Switching: tfi = 25 ns (Typ) @ 100C tc = 50 ns (Typ) @ 100C tsv = 1 ms (Typ) @ 100C• Ultrafast FBSOA Specified• 100C Performance Specified for: RBSOA Inductive Load Switching Saturation Voltages Leakages |
|
Rating |
Symbol |
MJ16018 |
MJW16018 |
Unit |
| CollectorEmitter Sustaining Voltage |
VCEO(SUS) |
400 |
Vdc | |
| CollectorEmitter Breakdown Voltage |
VCBs |
650 |
Vdc | |
| EmitterBase Voltage |
VEBO |
6 |
Vdc | |
| Collector Current - Continuous - Pulsed (1) |
IC ICM |
15 20 |
Adc | |
| Base Current - Continuous - Pulsed (1) |
IB IBM |
10 15 |
Adc | |
| Total Power Dissipation @ TC = 25 @ TC = 100 Derate above TC = 25 |
PD |
175 100 1 |
135 54 10.9 |
Watts W/ |
| Operating and Storage Junction Temperature Range |
TJ, Tstg |
65 to +200 |
SupplierPost a Buying Lead | |